Improving the Performance and Stability of Perovskite Light-Emitting Diodes by a Polymeric Nanothick Interlayer-Assisted Grain Control Process

通过聚合物纳米厚夹层辅助晶粒控制工艺提高钙钛矿发光二极管的性能和稳定性

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作者:Loganathan Veeramuthu, Fang-Cheng Liang, Zhi-Xuan Zhang, Chia-Jung Cho, Ender Ercan, Chu-Chen Chueh, Wen-Chang Chen, Redouane Borsali, Chi-Ching Kuo

Abstract

CsPbBr3 is a promising light-emitting material due to its wet solution processability, high photoluminescence quantum yield (PLQY), narrow color spectrum, and cost-effectiveness. Despite such advantages, the morphological defects, unsatisfactory carrier injection, and stability issues retard its widespread applications in light-emitting devices (LEDs). In this work, we demonstrated a facile and cost-effective method to improve the morphology, efficiency, and stability of the CsPbBr3 emissive layer using a dual polymeric encapsulation governed by an interface-assisted grain control process (IAGCP). An eco-friendly low-cost hydrophilic polymer poly(vinylpyrrolidone) (PVP) was blended into the CsPbBr3 precursor solution, which endows the prepared film with a better surface coverage with a smoothened surface. Furthermore, it is revealed that inserting a thin PVP nanothick interlayer at the poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS)/emissive layer interface further promotes the film quality and the performance of the derived LED. It is mainly attributed to three major consequences: (i) reduced grain size of the emissive layer, which facilitates charge recombination, (ii) reduced current leakage due to the enhanced electron-blocking effect, and (iii) improved color purity and air stability owing to better defect passivation. As a result, the optimized composite emissive film can retain the luminescence properties even on exposure to ambient conditions for 80 days and ∼62% of its initial PL intensity can be preserved after 30 days of storage without any encapsulation.

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