Abstract
Due to the continued miniaturization of semiconductor devices, slurry formulations utilized in the chemical mechanical planarization (CMP) process have become increasingly complex to meet stringent manufacturing specifications. Traditionally, in shallow trench isolation (STI), CMP, a contact cleaning method involving a poly(vinyl alcohol) (PVA) brush, is used to effectively transfer cleaning chemistry to the oxide substrate. This PVA brush can cause nonuniform cleaning chemistry transport, increased interfacial shear force, and cleaning-induced defectivity from brush loading. Previous work with traditional cleaning processes has shown that using "soft" supramolecular cleaning chemistries has dramatically improved cleaning efficacy while also minimizing the number of induced p-CMP defects. To minimize these effects, noncontact cleaning via the implementation of megasonic action has gained attention. This work employs "soft" cleaning chemistries with Cu2+-amino acid complexes, which can catalyze the formation of critical reactive oxygen species (ROS), and evaluates the p-CMP performance under megasonic action. Results from a second-order kinetic model indicate that megasonic conditions (i.e., time and power), "soft" cleaning chemistry structure (i.e., shape and charge), and the generation of ROS all play a critical role in cleaning efficacy under low shear stress conditions.