Characterizing the Switching Thresholds of Magnetophoretic Transistors

磁泳晶体管开关阈值的表征

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作者:Roozbeh Abedini-Nassab, Daniel Y Joh, Melissa A Van Heest, John S Yi, Cody Baker, Zohreh Taherifard, David M Margolis, J Victor Garcia, Ashutosh Chilkoti, David M Murdoch, Benjamin B Yellen

Abstract

The switching thresholds of magnetophoretic transistors for sorting cells in microfluidic environments are characterized. The transistor operating conditions require short 20-30 mA pulses of electrical current. By demonstrating both attractive and repulsive transistor modes, a single transistor architecture is used to implement the full write cycle for importing and exporting single cells in specified array sites.

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