In situ X-ray diffraction investigation of NiS (x) -formation on Ni-foam using chemical vapor deposition with H(2)S

利用化学气相沉积法和H₂S在镍泡沫上原位X射线衍射研究NiS(x)的形成

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Abstract

Nickel foam treated via chemical vapor deposition (CVD) with H(2)S has demonstrated potential in applications such as supercapacitors and catalysis for alkaline water electrolysis. However, the formation mechanism of the nickel sulfide surface layer remains poorly understood. In this study, in situ powder X-ray diffraction (PXRD) was employed to identify the crystalline phase transformations and the reaction mechanism and assess its kinetics. Ni(3)S(2) formation was investigated under industrially relevant conditions by passing 3% H(2)S/Ar through Ni foam and tracking the growth of the sulfided layer in relation to thickness and time. The reduced sulfidation rate observed at low flow, extended time, and greater depths indicated strong mass transfer limitations, whereas the pronounced increase between 90 and 170 °C revealed the high activation energy of the sulfidation process. A diffusion-reaction model is proposed to describe the spatial and time evolution of the Ni(3)S(2) layer growth, assuming that H(2)S diffuses through the newly formed Ni(3)S(2) layer before reacting at the Ni interface. The modelling results indicate that both the reaction and diffusion occur at fast rates and compete in the temperature range of 130-170 °C. Post-synthesis SEM and tomography analysis confirmed improved uniformity in nickel-sulfide layer thickness and extrusion coverage when the process is reaction limited rather than diffusion limited: either at synthesis temperatures below 130 °C or a higher flow rate at 130 °C. On the other hand, higher temperatures promote the formation of large NiS (x) extrusions. These results provide insight into the effect of the synthesis parameters on the microstructure and the formation of Ni(3)S(2) and NiS (x) , providing fundamental physico-chemical and transport properties for process optimization and upscaling.

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