Doping effects of indium and copper on ferromagnetism in N-type magnetic semiconductor Ba(Zn,Co)(2)As(2)

铟和铜掺杂对N型磁性半导体Ba(Zn,Co)2As(2)铁磁性的影响

阅读:1

Abstract

We report the manipulation of ferromagnetism in n-type magnetic semiconductor Ba(Zn,Co)(2)As(2) through carriers' doping. Doping In or Cu into Zn-sites introduces additional n-type or p-type carriers, respectively. Focusing on Ba(Zn(0.97)Co(0.03))(2)As(2) which has a [Formula: see text] ∼ 31 K, In doping introduces additional n-type carriers and 2% In doping drastically improves the ferromagnetic transition temperature by 16% to 36 K. In contrast, 1.5% Cu doping suppresses [Formula: see text] by 52% to 15 K; 3% Cu doping turns the dominant carrier to p-type, and eventually transforms the ferromagnetic ordering into a paramagnetic state. Our experimental results unequivocally demonstrate that the magnetic ordering in Ba(Zn,Co)(2)As(2) is carriers' mediated ferromagnetism, and its ground states can be manipulated by carriers.

特别声明

1、本页面内容包含部分的内容是基于公开信息的合理引用;引用内容仅为补充信息,不代表本站立场。

2、若认为本页面引用内容涉及侵权,请及时与本站联系,我们将第一时间处理。

3、其他媒体/个人如需使用本页面原创内容,需注明“来源:[生知库]”并获得授权;使用引用内容的,需自行联系原作者获得许可。

4、投稿及合作请联系:info@biocloudy.com。