Abstract
High-performance hydrogen gas sensors have gained considerable interest for their crucial function in reducing H(2) explosion risk. Although MoS(2) has good potential for chemical sensing, its application in hydrogen detection at room temperature is limited by slow response and incomplete recovery. In this work, Pd-doped MoS(2) thin films are deposited on a Si substrate, forming Pd-doped MoS(2)/Si heterojunctions via magnetron co-sputtering. The incorporation of Pd nanoparticles significantly enhances the catalytic activity for hydrogen adsorption and facilitates more efficient electron transfer. Owing to its distinct structural characteristics and sharp interface properties, the fabricated Pd-doped MoS(2)/Si heterojunction device exhibits excellent H(2) sensing performance under room temperature conditions. The gas sensor device achieves an impressive sensing response of ~6.4 × 10(3)% under 10,000 ppm H(2) concentration, representing a 110% improvement compared to pristine MoS(2). Furthermore, the fabricated heterojunction device demonstrates rapid response and recovery times (24.6/12.2 s), excellent repeatability, strong humidity resistance, and a ppb-level detection limit. These results demonstrate the promising application prospects of Pd-doped MoS(2)/Si heterojunctions in the development of advanced gas sensing devices.