Abstract
This research proposed a novel Al/Terp-Fc/p-Si/Al diode configuration that has never been presented. In order to investigate how the temperature affects impedance spectroscopy and charge transport processes, we have constructed the Al/Terp-Fc/p-Si diode structure. We have also shown that the synthesized material has the potential to be applied to further research on organic semiconductors. Thermionic emission theory was used to evaluate the diode's continual charge transport mechanism. In examining its functionality as a temperature sensor electronic device, we thoughtfully considered its ideality factor, barrier height, mobility, diffusion coefficient, diffusion length, and transit time. It is also observed that the reverse leakage current is dominated at all temperatures by Schottky emission at the measured voltage region. Low capacitance and high conductance values were noted in the manufactured Al/Terp-Fc/p-Si diode, especially at higher frequencies and at all temperatures. This phenomenon revealed the role of the temperature in the unique distribution, reorganization, and restructuring of surface states. The ac conductivity, dielectric constant, loss tangent, and complex dielectric/electric modulus of Al/Terp-Fc/p-Si diode were examined by the use of impedance/admittance characteristics at frequency range 300 Hz-1.5 MHz, operating between 300 and 400 K. Examining the dielectric characteristics' frequency dependence revealed that all of these variables are frequency-dependent, particularly in the low-frequency range, which is caused by interface states and surface polarization. Furthermore, an analysis of the Cole-Cole diagrams of the Al/Terp-Fc/p-Si diode is conducted, and the corresponding equivalent circuit is deduced. The equivalent circuit of the fabricated diode consisted of a resistance (R (g) ) and constant phase element (CPE (g) ) connected with parallel. According to the results obtained, the designed device could be utilized as a capacitor in electrical circuits.