Integrated Low-Voltage Compliance and Wide-Dynamic Stimulator Design for Neural Implantable Devices

用于神经植入设备的集成式低电压顺应性和宽动态刺激器设计

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Abstract

In this study, a pulse frequency modulation (PFM)-based stimulator is proposed for use in biomedical implantable devices. Conventionally, functional electrical stimulation (FES) techniques have been used to reinforce damaged nerves, such as retina tissue and brain tissue, by injecting a certain amount of charge into tissues. Although several design methods are present for implementing FES devices, an FES stimulator for retinal implants is difficult to realize because of the chip area, which needs to be inserted in a fovea, sized 5 mm x 5 mm, and power limitations to prevent the heat generation that causes tissue damage. In this work, we propose a novel stimulation structure to reduce the compliance voltage during stimulation, which can result in high-speed and low-voltage operation. A new stimulator that is composed of a modified high-speed PFM, a 4-bit counter, a serializer, a digital controller, and a current driver is designed and verified using a DB HiTek standard 0.18 μm process. This proposed stimulator can generate a charge up to 130 nC, consumes an average power of 375 µW during a stimulation period, and occupies a total area of 700 µm × 68 µm.

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