Abstract
High-purity dichlorosilane (DCS) is an important raw material for thin film deposition in the semiconductor industry, such as epitaxial silicon, which is mainly produced by trichlorosilane (TCS) catalytic decomposition in a fixed-bed reactor. The productivity of DCS is strongly dependent on the controlling of the TCS decomposition reaction process, associated with the cost in practical application. In this study, we have performed computational fluid dynamics (CFD) simulation on the TCS decomposition reaction kinetics in a cylindrical fixed-bed reactor, in which the effects of catalyst bed height, feed temperature, and feed flow rate are stressed to predict the conversion rate of TCS and the generation rate of DCS. This indicates that the increase of bed height helps the reaction to proceed adequately, but too large a bed height does not improve the DCS generation rate. Meanwhile, the feed temperature and reactor temperature have important effects on the DCS generation rate. However, it is found that changing the feed flow rate and L/D ratio cannot effectively improve the DCS generation rate while the bed volume remains constant. Furthermore, we have designed a fixed-bed reactor to verify the simulation results, which are in good agreement with each other. These results are of significance for the practical industrial production of high-purity DCS in a fixed-bed reactor.