Abstract
Infrared (IR) thermal sensors on CMOS-SOI-MEMS platforms enable scalable, low-cost thermal imaging but require optimized optical, thermal, and mechanical performance. This paper presents a multiphysics modeling framework to study the integration of Metasurface absorbers into a Thermal CMOS-SOI-MEMS IR sensor. Using finite-difference time-domain (FDTD) simulations, we demonstrate near-unity absorption at targeted wavelengths (e.g., 4.26 µm for CO(2) sensing, 10 µm for thermal imaging) compared to conventional absorbers. The absorbed power, calculated from blackbody irradiance, drives thermal finite element analysis (FEA), confirming high thermal isolation and maximized temperature rise (ΔT) while quantifying the thermal time constant's sensitivity to Metasurface mass. An analytical RC circuit model, validated against 3D FEA, accurately captures thermal dynamics for rapid design iterations. Mechanical modal and harmonic analyses verify structural integrity, with natural frequencies above 20 kHz, ensuring resilience against mechanical resonances and environmental vibrations. This holistic framework quantifies trade-offs between optical efficiency, thermal responsivity, and mechanical stability, providing a predictive tool for designing high-performance, uncooled IR sensors compatible with CMOS processes.