Abstract
Halide perovskite nanocrystals (PNCs) exhibit growing attention in optoelectronics due to their fascinating color purity and improved intrinsic properties. However, structural defects emerging in PNCs progressively hinder the radiative recombination and carrier transfer dynamics, limiting the performance of light-emitting devices. In this work, we explored the introduction of guanidinium (GA+) during the synthesis of high-quality Cs1-xGAxPbI3 PNCs as a promising approach for the fabrication of efficient bright-red light-emitting diodes (R-LEDs). The substitution of Cs by 10 mol % GA allows the preparation of mixed-cation PNCs with PLQY up to 100% and long-term stability for 180 days, stored under air atmosphere and refrigerated condition (4 °C). Here, GA+ cations fill/replace Cs+ positions into the PNCs, compensating intrinsic defect sites and suppressing the nonradiative recombination pathway. LEDs fabricated with this optimum material show an external quantum efficiency (EQE) near to 19%, at an operational voltage of 5 V (50-100 cd/m2) and an operational half-time (t50) increased 67% respect CsPbI3 R-LEDs. Our findings show the possibility to compensate the deficiency through A-site cation addition during the material synthesis, obtaining less defective PNCs for efficient and stable optoelectronic devices.