Bandgap Engineering and Enhancing Optoelectronic Performance of a Lead-Free Double Perovskite Cs(2)AgBiBr(6) Solar Cell via Al Doping

通过铝掺杂调控无铅双钙钛矿Cs(2)AgBiBr(6)太阳能电池的带隙并提升其光电性能

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Abstract

In this study, solar cells based on pure Cs(2)AgBiBr(6) and Al-doped metal were fabricated using the sol-gel spin-coating technique. X-ray diffraction (XRD) analysis confirmed the formation of cubic-structured films for both pure and Al-doped. Notably, the grain size of Al-doped Cs(2)AgBiBr(6) was observed to be larger than that of its pure counterpart. The optical properties of these films were investigated using UV-vis spectroscopy, revealing essential parameters such as the bandgap energy (E(g)), refractive index (n), extinction coefficients (k), and dielectric constant. While the pure film exhibited an E(g) of 1.91 eV, the Al-doped film demonstrated a slightly lower E(g) of 1.82 eV. Utilization of these films in solar cell fabrication yielded intriguing results. The J-V curve shows that the pure solar cell displayed a short-circuit current density (J(sc)) of 5.01 mA/cm(2), a fill factor (FF) of 0.67, an open-circuit voltage (V(oc)) of 0.89 V, and an efficiency of 3.02%. Al doping led to improvements, with an increase in V(oc) to 0.91 V, FF to 0.71, and J(sc) to 5.29 mA/cm(2). Consequently, the overall efficiency surged to 3.40%, marking a substantial 12.5% enhancement compared with the pure solar cell. These findings underscore the efficacy of Al doping in enhancing the performance of Cs(2)AgBiBr(6)-based solar cells.

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