Abstract
Although flexible monolithic bifunctional devices are significant for next-generation optoelectronic devices, it is quite challenging to realize them. In this work, a flexible monolithic device with both functions of emission and self-driven detection has been proposed and demonstrated successfully. By a quick electrochemical etching method, the device is created using a lift-off (In,Ga)N film detaching from the epitaxial silicon substrate. The Si removal is beneficial for releasing stress and reducing the internal polarization effects under bending conditions, keeping the electroluminescence peak wavelength quite stable. With good flexibility, the monolithic bifunctional device can maintain both stable detection and emission performance under bending conditions. Furthermore, two functions of detection and lighting of the flexible monolithic device can not only be realized separately but also simultaneously. This means that the flexible monolithic device can detect and emit light at the same time. With the advantages of miniaturization and multifunctionality, this work paves an effective way to develop new monolithic multifunctional devices for both self-driven detection and wearable intelligent display.