Abstract
Thin films of chalcopyrite, CuFeS(2), are promising candidates for use as absorber layers in photovoltaic cells due to their low band gap and high absorbance. These films are typically deposited in two or three steps, always involving an annealing process. In this work, the CuFeS(2) film was deposited on a glass substrate in a single deposition step using the cathodic cylindrical plasma deposition (CCyPD) technique. The film samples deposited were analyzed by X-ray diffraction (XRD) and Raman spectroscopy, the film thickness was measured using the optical method, and FEG-SEM analyzed the surface structural morphology. The results showed a strong dependence on the deposition temperature for phase formation, with chalcopyrite being obtained for films deposited at 600 °C. At this temperature, a uniformly distributed film with uniform grain sizes was obtained, and the experimentally obtained band gap values of the films were consistent with the theoretical values reported in the literature, demonstrating the technique's effectiveness and precision in producing high-quality films.