日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

Nanostructured h-WO(3)-Based Ionologic Gates with Enhanced Rectification and Transistor Functionality

基于纳米结构h-WO(3)的离子门具有增强的整流和晶体管功能

Bahrawy, Ahmed; Galek, Przemyslaw; Gellrich, Christin; Niese, Nick; Mohamed, Mohamed A A; Hantusch, Martin; Grothe, Julia; Kaskel, Stefan

Redox-active electrolyte-based printed ionologic devices.

基于氧化还原活性电解质的印刷离子器件

Zhou Hanfeng, Galek Przemyslaw, Zheng Tianle, Li Panlong, Zhou Xiongjun, Liu Congcong, Kunigkeit Jonas, Haase Katherina, Li Yuxi, Qu Jiang, Bahrawy Ahmed, Xiong Peixun, Grothe Julia, Mikhailova Daria, Mannsfeld Stefan C B, Brunner Eike, Kaskel Stefan