Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
利用聚焦离子束和金属有机化学气相沉积法制备高质量GaN横向纳米线和平面腔的方法
期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-018-25647-7
Pozina, Galia; Gubaydullin, Azat R; Mitrofanov, Maxim I; Kaliteevski, Mikhail A; Levitskii, Iaroslav V; Voznyuk, Gleb V; Tatarinov, Evgeniy E; Evtikhiev, Vadim P; Rodin, Sergey N; Kaliteevskiy, Vasily N; Chechurin, Leonid S