Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
分子束外延法及其制备的GaAsBi/GaAs量子阱的性质:热退火的影响
期刊:Nanoscale Research Letters
影响因子:
doi:10.1186/1556-276X-9-123
Makhloufi, Hajer; Boonpeng, Poonyasiri; Mazzucato, Simone; Nicolai, Julien; Arnoult, Alexandre; Hungria, Teresa; Lacoste, Guy; Gatel, Christophe; Ponchet, Anne; Carrère, Hélène; Marie, Xavier; Fontaine, Chantal