Influence of the Si-Layer Thickness on the Structural, Compositional and Resistive Switching Properties of SiO(2)/Si/SiO(2) Stack Layers for Resistive Switching Memories
硅层厚度对SiO(2)/Si/SiO(2)堆叠层电阻式存储器的结构、成分和电阻开关特性的影响
期刊:Materials
影响因子:3.2
doi:10.3390/ma18245539
Morales-Sánchez, Alfredo; González-Flores, Karla E; Germán-Martínez, Jesús M; Palacios-Márquez, Braulio; Ramírez-Rios, Juan F; Flores-Méndez, Javier; Benítez-Lara, Alfredo; Ramos-Serrano, Juan R; Hernández-Martínez, Luis; Moreno-Moreno, Mario
