High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity
灵敏度高于理想能斯特灵敏度的高场调制离子选择性场效应晶体管（FET）传感器
期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-018-26792-9
Chen, Yi-Ting; Sarangadharan, Indu; Sukesan, Revathi; Hseih, Ching-Yen; Lee, Geng-Yen; Chyi, Jen-Inn; Wang, Yu-Lin
