Abstract
Fano resonance from photonic crystal nanobeam cavity (PCNC) is important building block for large-scale photonic integrated circuits (PICs) to enable photonic switches and sensors with superior characteristics. Nevertheless, most state-of-the-art demonstrations rely on electron beam lithography (EBL) and operate in dielectric mode. Hence, we theoretically, numerically and experimentally present the characteristics of Fano resonance from optical interference between the discrete state of air-mode PCNC and the continuum mode of side-coupled line-defect waveguide with partially transmitting element (PTE) using deep ultraviolet (DUV) lithography for the first time. Experimentally high average Q-factor of ∼1.58 × 10(4) is achieved for 30 measured devices, which indicates the feasibility of mass manufacture of high-Q Fano resonance from air-mode PTE-PCNC. Additionally, the thermo-optic bi-stability and thermal tuning characterizations of the proposed device are discussed. This work will contribute to building ultra-compact lab-on-chip resonance-based photonic components.