Abstract
In the InGaN multiple quantum wells (MQWs), V-shaped pits play a crucial role in carrier transport, which directly affects emitting efficiency. First-principles calculations are applied to investigate the formation of the V-shaped pits, and the results indicate that they are inclined to form in the N-rich environment. Meanwhile, we calculate the interfacial electronic properties of the sidewalls of the V-shaped pits with varying indium (In) and magnesium (Mg) compositions. The calculated valence band offset (VBO) of the In(0.3)Ga(0.7)N/Ga(0.94)Mg(0.06)N (0001) is 0.498 eV, while that of the In(0.07)Ga(0.93)N/Ga(0.94)Mg(0.06)N (101̅1) is 0.340 eV. The band alignment results show that the valence band edges in the Ga(1-y)Mg(y)N layer are in higher energy than in the In(x)Ga(1-x)N layer. These are in good agreement with the values reported in the previous numerical simulation. Moreover, the calculation of the projected density of states (PDOS) of interfaces discloses that the strong hybridization between the N 2p orbital and the Mg 2p orbital exerts a vital influence on the upward shifts of the valence band edges in the superlattices (SLs). All these results reveal that holes are easier to inject into the quantum wells (QWs) via the sidewall of V-shaped pits rather than the c-plane QWs, providing a theoretical basis for the growth of InGaN MQWs samples containing V-shaped pits.