Enhancing the Resistive Switching Properties of Transparent HfO(2)-Based Memristor Devices for Reliable Gasistor Applications

增强透明HfO(2)基忆阻器器件的阻变特性,以实现可靠的气体晶体管应用

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Abstract

We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on/off ratio of about 125. This improvement is due to the better control of the electric field distribution and the oxygen vacancy concentration when applying the RS BE to transparent memristors. Maintaining the stability of the conducting filament in an ambient air environment for extended periods of time is crucial for the application of memristors as gasistors. The memristor with an RS BE demonstrates an ability to sustain a stable-current state for approximately 10(4) s. As a result, it is shown that the proposed transparent memristor with an RS BE can significantly enhance the device's reliability for gasistor applications.

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